Bias Dependence of Single Balaji

devices necessitate evaluating the SEU mechanisms of FinFET circuit stability at low supply voltages dissipation, it is also necessary over a range of voltages. FinFET proton exponential low simulations show that the weak variation of supply voltage critical charge Index Terms particles, Neutrons, Heavy The Semiconductor Industry Association (SIA) roadmap has identified power dissipation as one of the key reliability concerns for future electronic systems dissipation is proportional to have resorted to reducing With technology scaling and the aforementioned reduction in the supply voltage, single storage cells has emerged as another major reli [2, cells with error detection/correction schemes is easy, protecting flip against SEU hardening Manuscript received July 10, 2015. B. Narasimham Broadcom Corporation, Irvine CA 92617 USA (phone: 949 [email protected]). D. M. Harris is with the Harvey Mudd College, USA I. Chatterjee is with the University of Bristol, K. Ni, Vanderbilt University, Nashville TN 37235 USA. A —With fabrication processes migrating from planar to FinFET s. Since FinFET -based Ds, neutrons increase -LET particles. , combined with , is responsible for this t — major design challenge for the electronics industry is the overall power dissipation 3]. Although mitigating SE s is difficult or requires the use of design solutions that have performance tradeoffs. With